1 power mosfet IRFBC40, sihfbc40 features ? dynamic dv/dt rating ? repetitive avalanche rated ? fast switching ? ease of paralleling ? simple drive requirements ? lead (pb)-free available description third generation power mosfet s from vishay provide the designer with the best combi nation of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. v dd = 50 v, starting t j = 25 c, l = 27 mh, r g = 25 , i as = 6.2 a (see fig. 12). c. i sd 6.2 a, di/dt 80 a/s, v dd v ds , t j 150 c. d. 1.6 mm from case. product summary v ds (v) 600 r ds(on) ( )v gs = 10 v 1.2 q g (max.) (nc) 60 q gs (nc) 8.3 q gd (nc) 30 configuration single n -channel mosfet g d s to-220 g d s a v aila b le rohs* compliant ordering information package to-220 lead (pb)-free IRFBC40pbf sihfbc40-e3 snpb IRFBC40 sihfbc40 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 6.2 a t c = 100 c 3.9 pulsed drain current a i dm 25 linear derating factor 1.0 w/c single pulse avalanche energy b e as 570 mj repetitive avalanche current a i ar 6.2 a repetitive avalanche energy a e ar 13 mj maximum power dissipation t c = 25 c p d 125 w peak diode recovery dv/dt c dv/dt 3.0 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m www.kersemi.com
2 IRFBC40, sihfbc40 notes a. repetitive rating; pulse width limited by maximum junction temper ature (see fig. 11). b. pulse width 300 s; duty cycle 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -1.0 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 600 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma - 0.7 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v - - 100 a v ds = 480 v, v gs = 0 v, t j = 125 c - - 500 drain-source on-state resistance r ds(on) v gs = 10 v i d = 3.7a b -- 1.2 forward transconductance g fs v ds = 100 v, i d = 3.7 a b 4.7 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 1300 - pf output capacitance c oss - 160 - reverse transfer capacitance c rss -30- total gate charge q g v gs = 10 v i d = 6.2 a, v ds = 360 v, see fig. 6 and 13 b --60 nc gate-source charge q gs --8.3 gate-drain charge q gd --30 turn-on delay time t d(on) v dd = 300 v, i d = 6.2 a, r g = 9.1 , r d = 47 , see fig. 10 b -13- ns rise time t r -18- turn-off delay time t d(off) -55- fall time t f -20- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --6.2 a pulsed diode forward current a i sm --25 body diode voltage v sd t j = 25 c, i s = 6.2 a, v gs = 0 v b -- 1.5 v body diode reverse recovery time t rr t j = 25 c, i f = 6.2 a, di/dt = 100 a/s b - 450 940 ns body diode reverse recovery charge q rr - 3.8 7.9 c forward turn-on time t on intrinsic turn-on time is neglig ible (turn-on is dominated by l s and l d ) d s g s d g www.kersemi.com
3 IRFBC40, sihfbc40 fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 150 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature www.kersemi.com
4 IRFBC40, sihfbc40 fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area www.kersemi.com
5 IRFBC40, sihfbc40 fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case fig. 12a - unclamped inductive test circui t fig. 12b - unclamped inductive waveforms p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f r g i as 0.01 t p d.u.t l v ds + - v dd a 10 v v ary t p to o b tain re qu ired i as i as v ds v dd v ds t p www.kersemi.com
6 IRFBC40, sihfbc40 fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + - www.kersemi.com
7 IRFBC40, sihfbc40 fig. 14 - for n-channel p. w . period di/dt diode reco v ery d v /dt ripple 5 % body diode for w ard drop re-applied v oltage re v erse reco v ery c u rrent body diode for w ard c u rrent v gs = 10 v * v dd i sd dri v er gate dri v e d.u.t. i sd w a v eform d.u.t. v ds w a v eform ind u ctor c u rrent d = p. w . period + - + + + - - - * v gs = 5 v for logic le v el de v ices peak diode recovery dv/dt test circuit v dd ? d v /dt controlled b y r g ? dri v er same type as d.u.t. ? i sd controlled b y d u ty factor "d" ? d.u.t. - de v ice u nder test d.u.t. circ u it layo u t considerations ? lo w stray ind u ctance ? gro u nd plane ? lo w leakage ind u ctance c u rrent transformer r g www.kersemi.com
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